1N60 Germanium Diode

1N60 is a germanium diode with very low reverse current and ultra high switching characteristics.

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Features Of 1N60 Germanium Diode

• Metal silicon junction, majority carrier conduction

• High current capability, Low forward voltage drop

• Extremely low reverse current lR

• Ultra speed switching characteristics

• Small temperature coefficient of forward characteristics

• Satisfactory Wave detection efficiency

• For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier

Mechanical Data

• Case : DO-35 glass case

• Polarity : Color band denotes cathode end

• Weight : Approx. 0.13 gram

Maximum Ratings Of 1N60 Germanium Diode

• Maximum Repetitive Peak Reverse Voltage (VRRM)50 v

• Maximum Average Forward Rectified Current (IF(AV)) 50mA

• Maximum Instantaneous Forward Voltage (VF) 1.0 v

• Maximum Reverse Leakage(VR) 20

• Typical Thermal Resistance, Juncion to Ambient (RthJA) 250

• Operating Temperature range (TJ) -55 to +70

• Storage Temperature Range (TSTG) -55 to +100

Related Links

• 1N60 Germanium Diode
• What is Germanium Diode?