2N2222 is NPN BJT normally used in low power amplifiers and also for switching application.
2n2222 is used as a small signal transistor and used as a general purpose transistor and is very popular. This is in TO-92 package form.
NPN Silicon Planar Switching Transistors.
Switching and Linear application DC and VHF Amplifier applications.
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO : 40 Vdc
Collector–Base Voltage VCBO : 75 Vdc
Emitter–Base Voltage VEBO : 6.0 Vdc
Collector Current — Continuous IC : 600 mAdc
Total Device Dissipation(PD) @ TA = 25°C : 625 mW
PD Derate above 25°C : 5.0 mW/°C
Total Device Dissipation(PD)@ TC = 25°C : 1.5 Watts
PD Derate above 25°C : 12 mW/°C
Operating and Storage Junction Temperature Range (TJ, Tstg) : –55 to +150 °C
Thermal Resistance, Junction to Ambient RJA : 200 °C/W
Thermal Resistance, Junction to Case RJC : 83.3 °C/W
See 0 Ratings & Reviews |
2N2222 is NPN BJT normally used in low power amplifiers and also for switching application.
2n2222 is used as a small signal transistor and used as a general purpose transistor and is very popular. This is in TO-92 package form.
NPN Silicon Planar Switching Transistors.
Switching and Linear application DC and VHF Amplifier applications.
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO : 40 Vdc
Collector–Base Voltage VCBO : 75 Vdc
Emitter–Base Voltage VEBO : 6.0 Vdc
Collector Current — Continuous IC : 600 mAdc
Total Device Dissipation(PD) @ TA = 25°C : 625 mW
PD Derate above 25°C : 5.0 mW/°C
Total Device Dissipation(PD)@ TC = 25°C : 1.5 Watts
PD Derate above 25°C : 12 mW/°C
Operating and Storage Junction Temperature Range (TJ, Tstg) : –55 to +150 °C
Thermal Resistance, Junction to Ambient RJA : 200 °C/W
Thermal Resistance, Junction to Case RJC : 83.3 °C/W