MOSFET 2SK3565 N‑Channel High-Voltage TO‑220

2SK3565 N-Channel MOSFET for high-voltage applications with 900V rating, 5A current, and low on-resistance.

The 2SK3565 N‑Channel MOSFET is engineered for high-voltage applications, ideal for switching voltage regulators and power supplies. With a breakdown voltage of 900V and a continuous drain current of 5A, it ensures reliable performance in demanding environments. Its low on-resistance of approximately 2.5Ω at VGS=10V and ID=3A enhances efficiency and thermal management, making it suitable for various industrial applications.

Designed in a TO‑220 package, the 2SK3565 N‑Channel MOSFET offers straightforward soldering and effective heat dissipation. Fast switching characteristics, including rise and fall times of approximately 30ns and 60ns, provide versatility for high-speed switching applications. This MOSFET is a trusted choice for engineers needing robust solutions for high-voltage power circuits.

As a preferred supplier in India, DNA offers the 2SK3565 N‑Channel MOSFET for quick dispatch. Explore our range of power semiconductors for reliable solutions in your electronic projects.

Discover the potential of MOSFET & IGBT with DNA. The Brand is committed to providing quality electronic components. Explore our extensive range of MOSFET & IGBT products. Check other "MOSFET & IGBT" that we have in stock.

If you are looking for specific electronic components, reach out to us at DNA. We can help you find parts like Inductors, Resistors, or even import rare items for you. We support both retail and bulk purchases. Contact Us

Features of 2SK3565 MOSFET

• High-voltage enhancement-mode N-channel MOSFET
• Drain-source voltage rating: 900 V
• Continuous drain current: 5 A
• RDS(on) ≤ 2.5 Ω at VGS = 10 V, ID = 3 A
• Fast switching: rise time ~30 ns, fall time ~60 ns
• TO‑220 through-hole package for easy soldering
• High total gate charge: ~28 nC at VGS = 10 V

Specification of 2SK3565 MOSFET

• Transistor Type: N‑Channel MOSFET
• Drain‑Source Breakdown Voltage (VDSS): 900 V
• Gate‑Source Voltage (VGSS): ±30 V
• Continuous Drain Current (ID): 5 A
• Maximum RDS(on): ~2.5 Ω @ VGS=10 V, ID=3 A
• Gate Threshold Voltage (Vth): 2.0–4.0 V
• Total Gate Charge (Qg): ~28 nC @ VGS=10 V
• Input Capacitance (Ciss): ~1,150 pF
• Power Dissipation (PD): 45 W

Applications of 2SK3565 MOSFET

• Switching voltage regulators and converters
• High-voltage power supplies and inverters
• Industrial power switching circuits
• High-speed switching applications

Related Links for MOSFET 2SK3565 N‑Channel High-Voltage TO‑220

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X 2SK3565 N‑Channel MOSFET (TO‑220)