BSS138 N-Channel Field Effect Transistor

BSS138 N-Channel FET for low voltage applications with 50V, 0.22A, and low RDS(ON).

The BSS138 N-Channel Field Effect Transistor is designed for low voltage applications, offering a maximum drain-source voltage of 50 Volts and a continuous drain current of 0.22 Amperes. This transistor features a compact SOT-23 surface mount package, making it suitable for space-constrained designs. The BSS138 is perfect for small servo motor control and power MOSFET gate drivers due to its rugged and reliable performance.

Engineered using ON Semiconductor’s advanced DMOS technology, the BSS138 N-Channel Transistor minimizes on-state resistance, ensuring efficient operation. With an RDS(ON) of just 3.5Ω at VGS = 10 Volts, it provides fast switching capabilities, essential for various electronic applications. This transistor operates efficiently in a temperature range from -55°C to +150°C, making it versatile for different environments.

For Indian customers looking for reliable electronic components, the BSS138 offers an ideal solution for switching applications. Whether you are designing circuits for automation or control, the BSS138 N-Channel Field Effect Transistor is a dependable choice.

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Features of BSS138 N-Channel Field Effect Transistor

• Compact SOT-23 surface mount package
• Rugged & Reliable
• High density cell design
• 0.22 Ampere, 50 Volts
• Low RDS(ON) values

Specifications of BSS138 N-Channel Field Effect Transistor

• Drain Source Voltage: 50 Volts
• Gate Source Voltage: +/-20V
• Drain Current Continuous: 0.22 Ampere
• Pulsed: 0.88 Ampere
• Max Power Dissipation: 0.36 Watt
• Operating Temp Range: -55 to +150°C
• Max Lead Temp for Soldering: 300°C

Applications of BSS138 N-Channel Field Effect Transistor

• Small servo motor control
• Power MOSFET gate drivers
• Switching applications
• Low current electronic circuits

Related Links for BSS138 N-Channel Field Effect Transistor

• Other Products from Diodes & Transistors Category

Package Includes

• 1 X BSS138 N-Channel Field Effect Transistor