BC857 is PNP transistor in a SOT23 plastic package. NPN complement of BC847.
Low current (max. 100 mA)
Low voltage (max. 65 V)
VEBO emitter-base voltage open collector : −5 V
IC collector current (DC) : −100 mA
ICM peak collector current : −200 mA
IBM peak base current : −200 mA
Ptot total power dissipation, Tamb ≤ 25 °C : − 250 mW
Tstg storage temperature : −65 to +150 °C
Tj junction temperature : 150 °C
Tamb operating ambient temperature : −65 to +150 °C
General purpose switching and amplification.
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BC857 is PNP transistor in a SOT23 plastic package. NPN complement of BC847.
Low current (max. 100 mA)
Low voltage (max. 65 V)
VEBO emitter-base voltage open collector : −5 V
IC collector current (DC) : −100 mA
ICM peak collector current : −200 mA
IBM peak base current : −200 mA
Ptot total power dissipation, Tamb ≤ 25 °C : − 250 mW
Tstg storage temperature : −65 to +150 °C
Tj junction temperature : 150 °C
Tamb operating ambient temperature : −65 to +150 °C
General purpose switching and amplification.