Fairchild N‑Channel MOSFET FQPF7N80C for High-Voltage Applications

FQPF7N80C N‑Channel MOSFET for high-voltage switching; 800V drain-source voltage; 6.6A continuous drain current.

The Fairchild N‑Channel MOSFET FQPF7N80C is engineered for high-voltage applications with an impressive 800V drain-source voltage rating. This robust MOSFET features a continuous drain current of 6.6A and low on-state resistance of 1.9Ω, making it ideal for efficient power management in switched-mode power supplies and active PFC circuits. Its TO-220F package enhances thermal management and isolation, ensuring reliable performance.

Designed with advanced DMOS QFET® technology, the FQPF7N80C delivers fast switching and low gate charge, which are critical for high-efficiency applications. With a maximum operating temperature of 150°C, it withstands challenging conditions in industrial power equipment. This MOSFET is 100% avalanche tested, further assuring its reliability in demanding environments.

For Indian customers seeking dependable electronic solutions, the FQPF7N80C is a top choice in the MOSFET & IGBT category. Its versatility extends to applications in electronic lamp ballasts and high-voltage switching circuits. Elevate your projects with this efficient component today.

Explore the reliability of MOSFET & IGBT products at DNA. The Fairchild brand offers exceptional performance in high-voltage applications. Browse our selection and discover other MOSFET & IGBT options available. Check other "MOSFET & IGBT" that we have in stock.

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Features of Fairchild N‑Channel MOSFET FQPF7N80C

• 800V drain-source breakdown voltage
• Continuous drain current: 6.6A (at TC=25°C)
• Low RDS(on): 1.9Ω max (@ VGS = 10V, ID = 3.3A)
• Low gate charge (~27nC typical)
• Low Crss (~10pF typical)
• 100% avalanche tested
• TO-220F fully-isolated package

Specification of Fairchild N‑Channel MOSFET FQPF7N80C

• Transistor Type: N‑Channel Enhancement Mode MOSFET (QFET®)
• VDSS (Drain‑Source Voltage): 800V
• ID (Continuous Drain Current): 6.6A (TC=25°C)
• RDS(on): 1.9Ω max @ VGS=10V, ID=3.3A
• Total Gate Charge (Qg): ~27nC typical
• Reverse Transfer Capacitance (Crss): ~10pF typical
• Gate‑Source Voltage (VGS): ±30V max
• Operating Temperature (Tj): –55°C to +150°C
• Power Dissipation (PD): ~56W (TC=25°C)
• Package: TO-220F (fully-isolated)

Applications of Fairchild N‑Channel MOSFET FQPF7N80C

• Switched-mode power supplies (SMPS)
• Active power factor correction (PFC) stages
• Electronic lamp ballasts and inverters
• High-voltage switching circuits
• Industrial power equipment

Related Links for Fairchild N‑Channel MOSFET FQPF7N80C for High-Voltage Applications

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Package Includes

• 1 X Fairchild N‑Channel MOSFET FQPF7N80C (TO‑220F)