FQT7N10 N Channel MOSFET

FQT7N10 N Channel MOSFET

The FQT7N10 N Channel MOSFET is a power-efficient, high-speed switching device designed for use in various electronic applications. With a maximum drain-source voltage of 100V and continuous drain current of 7A, it offers excellent switching characteristics and low gate charge. It is ideal for applications such as motor drivers, power supplies, and DC-DC converters. The MOSFET comes in a TO-252 (DPAK) surface-mount package, ensuring compact and thermally efficient integration.

DNA offers a variety of MOSFET & IGBT products, including the reliable FQT7N10 from a trusted manufacturer. These components are essential for efficient power management in devices like motor drivers. Check other MOSFET & IGBT that we have in stock.

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Features of FQT7N10 N Channel MOSFET

• N-channel enhancement mode power MOSFET

• Low on-resistance for efficient switching

• Fast switching speed and low gate charge

• High-speed and energy-efficient design

• Thermally efficient DPAK surface mount package

Specifications of FQT7N10 N Channel MOSFET

• Drain to Source Voltage (Vds): 100V

• Continuous Drain Current (Id): 7A

• Rds(on): 0.45Ω @ Vgs = 10V

• Gate Threshold Voltage (Vgs(th)): 2V to 4V

• Package: TO-252 (DPAK)

Applications of FQT7N10 N Channel MOSFET

• Switching regulators and DC-DC converters

• Power supply circuits

• Motor driver applications

• Relay replacement and load switching

• Battery-powered applications

Package Includes

1 x FQT7N10 N Channel MOSFET