FS8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularlysuited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
Parts are used all electronic products, such as Alarm, Computer, TV, Camera, Watch, Mobile Phone, Speaker, MP3/MP4 Player, Electric Toy, VCD/DVD Player, Telecommunication, Wireless Control and so on.
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FS8205A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularlysuited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
Parts are used all electronic products, such as Alarm, Computer, TV, Camera, Watch, Mobile Phone, Speaker, MP3/MP4 Player, Electric Toy, VCD/DVD Player, Telecommunication, Wireless Control and so on.