The IR2153 is an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer.
The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising under voltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity of IR2153 Half Bridge Driver has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the under voltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased under voltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
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The IR2153 is an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer.
The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising under voltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity of IR2153 Half Bridge Driver has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the under voltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased under voltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads