IRF1405 N Channel 55 Volt, 169 Ampere Power MOSFET in TO220 Package
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRF1405 power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make IRF1405 MOSFET an extremely efficient and reliable device for use in a wide variety of applications.
IRF1405 N Channel Power MOSFET comes in TO220 Package.
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 A
IDM Pulsed Drain Current 668 A
PD @TC = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 560mJ
See 1 Ratings & Reviews |
IRF1405 N Channel 55 Volt, 169 Ampere Power MOSFET in TO220 Package
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRF1405 power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make IRF1405 MOSFET an extremely efficient and reliable device for use in a wide variety of applications.
IRF1405 N Channel Power MOSFET comes in TO220 Package.
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 A
IDM Pulsed Drain Current 668 A
PD @TC = 25°C Power Dissipation 330 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 560mJ