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  5. IRS20957S High-Voltage Power Amplifier N Channel MOSFET
IRS20957S High-Voltage Power Amplifier N Channel MOSFET
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IRS20957S High-Voltage Power Amplifier N Channel MOSFET

Description

IRS20957S High-Voltage Power Amplifier N Channel MOSFET

IRS20957S Class D audio driver with PWM input, high voltage tolerance up to 200V, and integrated protection features.

The IRS20957S High-Voltage Power Amplifier N Channel MOSFET is designed for high-efficiency Class D audio applications. It features a floating PWM input, making it ideal for flexible circuit designs. This MOSFET integrates essential protections like Under-Voltage Lockout and Over-Temperature Protection, ensuring reliability in demanding environments. With a high voltage tolerance of up to 200V, the IRS20957S supports robust audio performance while minimizing distortion.

Engineered for high-fidelity audio, the IRS20957S High-Voltage Power Amplifier N Channel MOSFET is perfect for applications requiring low power consumption and efficient thermal management. Its integrated dead-time generation prevents shoot-through, enhancing overall efficiency. The device operates within a temperature range of -40°C to +125°C, making it suitable for various conditions.

For Indian customers seeking reliable performance, the IRS20957S offers an excellent solution in the MOSFET & IGBT category. Explore how this component can elevate your audio projects with its advanced features and robust design.

Explore the efficiency of the IRS20957S from DNA, your trusted supplier of MOSFET & IGBT components. Check other "MOSFET & IGBT" that we have in stock.

If you're searching for specific electronic components, DNA is here to help. We can assist with imports and have a wide range of items including Nextion Display, Humidity & Temperature Sensor, and more. Contact Us

Features of IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • High-Voltage Tolerant
  • Floating PWM Input
  • Integrated Dead-Time Generation
  • Under-Voltage Lockout Protection
  • Over-Current Protection
  • Over-Temperature Protection
  • Low Power Consumption

Specification of IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • Supply Voltage (VCC): 10V to 20V
  • High-Side Floating Supply Voltage (VB): Up to 200V
  • Output Source Current (IO+ Peak): 1.4A
  • Output Sink Current (IO- Peak): 1.8A
  • Quiescent Current (VCC): 3.6mA (typical)
  • Operating Temperature Range: -40°C to +125°C
  • Propagation Delay (High to Low): 110 ns (typical)
  • Output Voltage Rise Time (tr): 35 ns (typical)

Applications of IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • High-Fidelity Audio Amplifiers
  • Class D Audio Power Amplifiers
  • Audio Signal Processing
  • High-Power Audio Applications
  • Professional Audio Equipment

Related Links for IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • Other Products from MOSFET & IGBT Category

Package Includes

  • 1 X IRS20957S High-Voltage Power Amplifier N Channel MOSFET

IRS20957S High-Voltage Power Amplifier N Channel MOSFET

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SKU: DAG322

₹ 246.03  (inc GST)

Description

IRS20957S High-Voltage Power Amplifier N Channel MOSFET

IRS20957S Class D audio driver with PWM input, high voltage tolerance up to 200V, and integrated protection features.

The IRS20957S High-Voltage Power Amplifier N Channel MOSFET is designed for high-efficiency Class D audio applications. It features a floating PWM input, making it ideal for flexible circuit designs. This MOSFET integrates essential protections like Under-Voltage Lockout and Over-Temperature Protection, ensuring reliability in demanding environments. With a high voltage tolerance of up to 200V, the IRS20957S supports robust audio performance while minimizing distortion.

Engineered for high-fidelity audio, the IRS20957S High-Voltage Power Amplifier N Channel MOSFET is perfect for applications requiring low power consumption and efficient thermal management. Its integrated dead-time generation prevents shoot-through, enhancing overall efficiency. The device operates within a temperature range of -40°C to +125°C, making it suitable for various conditions.

For Indian customers seeking reliable performance, the IRS20957S offers an excellent solution in the MOSFET & IGBT category. Explore how this component can elevate your audio projects with its advanced features and robust design.

Explore the efficiency of the IRS20957S from DNA, your trusted supplier of MOSFET & IGBT components. Check other "MOSFET & IGBT" that we have in stock.

If you're searching for specific electronic components, DNA is here to help. We can assist with imports and have a wide range of items including Nextion Display, Humidity & Temperature Sensor, and more. Contact Us

Features of IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • High-Voltage Tolerant
  • Floating PWM Input
  • Integrated Dead-Time Generation
  • Under-Voltage Lockout Protection
  • Over-Current Protection
  • Over-Temperature Protection
  • Low Power Consumption

Specification of IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • Supply Voltage (VCC): 10V to 20V
  • High-Side Floating Supply Voltage (VB): Up to 200V
  • Output Source Current (IO+ Peak): 1.4A
  • Output Sink Current (IO- Peak): 1.8A
  • Quiescent Current (VCC): 3.6mA (typical)
  • Operating Temperature Range: -40°C to +125°C
  • Propagation Delay (High to Low): 110 ns (typical)
  • Output Voltage Rise Time (tr): 35 ns (typical)

Applications of IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • High-Fidelity Audio Amplifiers
  • Class D Audio Power Amplifiers
  • Audio Signal Processing
  • High-Power Audio Applications
  • Professional Audio Equipment

Related Links for IRS20957S High-Voltage Power Amplifier N Channel MOSFET

  • Other Products from MOSFET & IGBT Category

Package Includes

  • 1 X IRS20957S High-Voltage Power Amplifier N Channel MOSFET
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