MJE13003D is HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR.
The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.
Fast-Switching And High Voltage Capability
Dynamic Parameters With Low Spread
High Reliability
Integrated Anti parallel Collector-Emitter Diode
Collector- Emitter Voltage (VBE =0) VCES=700 V
Collector-Emitter Voltage (I B =0) VCEO=400 V
Emitter-Base Voltage (IC=0, IB=0.75A, tP <10μS) VEBO=9 V
Collector Current IC=1.5 A
Collector Peak Current (tP <5ms) ICM=3 A
Emitter-Base Breakdown Voltage BVEBO IE =10mA, IC=0 is 9V(min), 18 V(max)
Base Current IB=0.75 A
Base Peak Current (tP <5ms) IBM=1.5 A
Collector-Emitter Sustaining Voltage VCEO (SUS) IC=10mA, IB=0=400
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MJE13003D is HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR.
The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.
Fast-Switching And High Voltage Capability
Dynamic Parameters With Low Spread
High Reliability
Integrated Anti parallel Collector-Emitter Diode
Collector- Emitter Voltage (VBE =0) VCES=700 V
Collector-Emitter Voltage (I B =0) VCEO=400 V
Emitter-Base Voltage (IC=0, IB=0.75A, tP <10μS) VEBO=9 V
Collector Current IC=1.5 A
Collector Peak Current (tP <5ms) ICM=3 A
Emitter-Base Breakdown Voltage BVEBO IE =10mA, IC=0 is 9V(min), 18 V(max)
Base Current IB=0.75 A
Base Peak Current (tP <5ms) IBM=1.5 A
Collector-Emitter Sustaining Voltage VCEO (SUS) IC=10mA, IB=0=400