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  5. MJE13003D NPN Power Transistor
MJE13003D NPN Power Transistor
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MJE13003D NPN Power Transistor

Description

MJE13003D NPN POWER TRANSISTOR

MJE13003D is HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR.

The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

FEATURES of MJE13003D NPN POWER TRANSISTOR

  • Fast-Switching And High Voltage Capability

  • Dynamic Parameters With Low Spread

  • High Reliability

  • Integrated Anti parallel Collector-Emitter Diode

  • Collector- Emitter Voltage (VBE =0) VCES=700 V

  • Collector-Emitter Voltage (I B =0) VCEO=400 V

  • Emitter-Base Voltage (IC=0, IB=0.75A, tP <10μS) VEBO=9 V

  • Collector Current IC=1.5 A

  • Collector Peak Current (tP <5ms) ICM=3 A

  • Emitter-Base Breakdown Voltage BVEBO IE =10mA, IC=0 is 9V(min), 18 V(max)

  • Base Current IB=0.75 A

  • Base Peak Current (tP <5ms) IBM=1.5 A

  • Collector-Emitter Sustaining Voltage VCEO (SUS) IC=10mA, IB=0=400

MJE13003D NPN Power Transistor

5

See 3 Ratings & Reviews |

Stock: 43
SKU: DAA143

₹ 11.80  (inc GST)

Description

MJE13003D NPN POWER TRANSISTOR

MJE13003D is HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR.

The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

FEATURES of MJE13003D NPN POWER TRANSISTOR

  • Fast-Switching And High Voltage Capability

  • Dynamic Parameters With Low Spread

  • High Reliability

  • Integrated Anti parallel Collector-Emitter Diode

  • Collector- Emitter Voltage (VBE =0) VCES=700 V

  • Collector-Emitter Voltage (I B =0) VCEO=400 V

  • Emitter-Base Voltage (IC=0, IB=0.75A, tP <10μS) VEBO=9 V

  • Collector Current IC=1.5 A

  • Collector Peak Current (tP <5ms) ICM=3 A

  • Emitter-Base Breakdown Voltage BVEBO IE =10mA, IC=0 is 9V(min), 18 V(max)

  • Base Current IB=0.75 A

  • Base Peak Current (tP <5ms) IBM=1.5 A

  • Collector-Emitter Sustaining Voltage VCEO (SUS) IC=10mA, IB=0=400

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