MJE13007 NPN Transistor

MJE13007 Switch-mode NPN Bipolar Power Transistor

The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Specifications Of MJE-13007 Switch-mode NPN Bipolar Power Transistor

• Product Category : Bipolar Transistors(BJT)
  

• Collector- Emitter Voltage VCEO Max : 400 V

• Collector- Base Voltage VCBO : 700 V

• Emitter- Base Voltage VEBO : 9 V

• Collector-Emitter Saturation Voltage : 1 V

• Maximum DC Collector Current : 8 A

• Gain Bandwidth Product fT : 14 MHz

• Minimum Operating Temperature : - 65 C

• Maximum Operating Temperature : + 150 C

• Continuous Collector Current : 8 A

• DC Collector/Base Gain hFE Min : 8

• Pd - Power Dissipation : 80 W

• Mounting Style : Through Hole

• Transistor Polarity : NPN

• Configuration : Single

• RoHS : No

Features Of MJE13007 Switch-mode NPN Bipolar Power Transistor

• SOA and Switching Applications Information

• Standard TO−220

• These Devices are Pb−Free and are RoHS Compliant

• Complementary to the MJE5850 through MJE5852 Series

Related Links

• MJE13007 Datasheet