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  5. MJE3055 Power Transistor
MJE3055 Power Transistor
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MJE3055 Power Transistor

Description

MJE3055 Power Transistor

The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package.

It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Features of MJE3055 Transistor

  • VCEO Collector-Emitter Voltage (IB=0): 60 V

  • VCBO Collector-Base Voltage (IE=0): 70 V

  • VEBO Emitter-Base Voltage (IC=0): 5 V

  • IC Collector Current: 10 A

  • IB Base Current: 6 A

  • Ptot Total Power Dissipation at Tcase: ≤ 25 oC 75 W

  • Tstg Storage Temperature: -55 to 150 oC

  • Tj Max. Operating Junction Temperature: 150 oC

  • Rthj-case Thermal Resistance Junction-case: Max 1.66 oC/W

MJE3055 Power Transistor

5

See 1 Ratings & Reviews |

SKU: DAA145 | 285

₹ 21.24  (inc GST)

Description

MJE3055 Power Transistor

The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package.

It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Features of MJE3055 Transistor

  • VCEO Collector-Emitter Voltage (IB=0): 60 V

  • VCBO Collector-Base Voltage (IE=0): 70 V

  • VEBO Emitter-Base Voltage (IC=0): 5 V

  • IC Collector Current: 10 A

  • IB Base Current: 6 A

  • Ptot Total Power Dissipation at Tcase: ≤ 25 oC 75 W

  • Tstg Storage Temperature: -55 to 150 oC

  • Tj Max. Operating Junction Temperature: 150 oC

  • Rthj-case Thermal Resistance Junction-case: Max 1.66 oC/W

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