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  5. MT4C4001JDJ 6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC
MT4C4001JDJ 6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC
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MT4C4001JDJ 6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC

Description

MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

MT4C4001JDJ 6 1 MEG x 4 DRAM with 5V operation, EDO page mode, and optional self-refresh.

The MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC is designed for high-performance applications, including computing and embedded systems. It features a 1 Meg x 4 configuration, providing efficient operation with fast access times. The EDO page mode allows for multiple data accesses per row address, significantly reducing latency during sequential reads or writes. Its optional self-refresh capability makes it ideal for power-sensitive applications.

Engineered with a standard operating voltage of 5V, the MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC supports a maximum access time of 60 ns. This component simplifies refresh operations with CAS-before-RAS refresh technology. It is packaged in a 24-pin plastic SOJ package, ensuring compatibility with various systems.

Applications of the MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC include early computer systems, embedded systems, industrial control systems, consumer electronics, and networking equipment. This versatility makes it a reliable choice for a wide range of electronic projects.

Explore the world of Memory IC's with DNA. Discover the MT4C4001JDJ 6 1 MEG x 4 DRAM and other high-quality components from trusted manufacturers. Check other Memory IC's that we have in stock.

At DNA, we cater to all your electronic component needs. If you cannot find specific parts, reach out to us. We can import items not in stock and support both retail and bulk orders. Check out our selection of inductors, Nextion displays, capacitors, analog ICs, power supplies, and sensor modules. Contact Us.

Features of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

  • Density: 4 Megabits organized as 1M x 4
  • Voltage: Operates at 5V ±10%
  • Access Time: Maximum speed of 60 ns
  • EDO page mode for faster data transfers
  • Optional self-refresh for power efficiency
  • CAS-before-RAS refresh technology
  • 24-pin plastic SOJ package.

Specification of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

  • Memory Type: Dynamic Random-Access Memory (DRAM)
  • Memory Size: 4 Megabits
  • Access Time: 60 ns
  • Package Type: 28-pin DIP
  • Supply Voltage: 5V ± 10% (4.5V to 5.5V).

Applications of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

  • Early computer systems
  • Embedded systems
  • Industrial control systems
  • Consumer electronics
  • Networking equipment.

Related Links for MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

  • Other Products from Memory IC's Category

Package Includes

  • 1 X MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

MT4C4001JDJ 6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC

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SKU: DAH573

₹ 1,295.40  (inc GST)

Description

MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

MT4C4001JDJ 6 1 MEG x 4 DRAM with 5V operation, EDO page mode, and optional self-refresh.

The MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC is designed for high-performance applications, including computing and embedded systems. It features a 1 Meg x 4 configuration, providing efficient operation with fast access times. The EDO page mode allows for multiple data accesses per row address, significantly reducing latency during sequential reads or writes. Its optional self-refresh capability makes it ideal for power-sensitive applications.

Engineered with a standard operating voltage of 5V, the MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC supports a maximum access time of 60 ns. This component simplifies refresh operations with CAS-before-RAS refresh technology. It is packaged in a 24-pin plastic SOJ package, ensuring compatibility with various systems.

Applications of the MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC include early computer systems, embedded systems, industrial control systems, consumer electronics, and networking equipment. This versatility makes it a reliable choice for a wide range of electronic projects.

Explore the world of Memory IC's with DNA. Discover the MT4C4001JDJ 6 1 MEG x 4 DRAM and other high-quality components from trusted manufacturers. Check other Memory IC's that we have in stock.

At DNA, we cater to all your electronic component needs. If you cannot find specific parts, reach out to us. We can import items not in stock and support both retail and bulk orders. Check out our selection of inductors, Nextion displays, capacitors, analog ICs, power supplies, and sensor modules. Contact Us.

Features of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

  • Density: 4 Megabits organized as 1M x 4
  • Voltage: Operates at 5V ±10%
  • Access Time: Maximum speed of 60 ns
  • EDO page mode for faster data transfers
  • Optional self-refresh for power efficiency
  • CAS-before-RAS refresh technology
  • 24-pin plastic SOJ package.

Specification of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

  • Memory Type: Dynamic Random-Access Memory (DRAM)
  • Memory Size: 4 Megabits
  • Access Time: 60 ns
  • Package Type: 28-pin DIP
  • Supply Voltage: 5V ± 10% (4.5V to 5.5V).

Applications of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

  • Early computer systems
  • Embedded systems
  • Industrial control systems
  • Consumer electronics
  • Networking equipment.

Related Links for MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

  • Other Products from Memory IC's Category

Package Includes

  • 1 X MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC
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