P80NF55 is a N-channel 55 V, 80 Ampere Single Power MOSFET in a TO-220 package
P80NF55 Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
P80NF55 N-Channel Power MOSFET comes in TO-220 package.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Standard threshold drive
VDS Drain-source voltage (VGS = 0) 55 V
VGS Gate- source voltage ±20 V
ID Drain current (continuos) at TC = 25 °C 80 A
ID Drain current (continuos) at TC = 100 °C 80 A
IDM Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 300 W
Derating factor 2 W/°C
Tj Operating junction temperature
Tstg Storage temperature -55 to 175 °C
Related Links
See 1 Ratings & Reviews |
P80NF55 is a N-channel 55 V, 80 Ampere Single Power MOSFET in a TO-220 package
P80NF55 Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.
P80NF55 N-Channel Power MOSFET comes in TO-220 package.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Standard threshold drive
VDS Drain-source voltage (VGS = 0) 55 V
VGS Gate- source voltage ±20 V
ID Drain current (continuos) at TC = 25 °C 80 A
ID Drain current (continuos) at TC = 100 °C 80 A
IDM Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 300 W
Derating factor 2 W/°C
Tj Operating junction temperature
Tstg Storage temperature -55 to 175 °C
Related Links