TIP147 Darlington Silicon Power Transistors

TIP147 transistor is designed for general-purpose amplifier and low frequency switching applications.

Features of TIP147 Darlington Silicon Power Transistors

• High DC Current Gain -Min h_FE = 1000 @ I_C= 5.0 A, V_CE = 4 V

• Collector-Emitter Sustaining Voltage - @ 30 mA V_CEO(sus) = 100Vdc (Min)

• Monolithic Construction with Built-In Base-Emitter Shunt Resistor

• These are Pb-Free Devices

• Collector - Emitter Voltage V_CEO 100 Vdc

• Collector - Base Voltage V_CB 100 Vdc

• Emitter - Base Voltage V_EB 5.0 Vdc

• Operating and Storage Junction Temperature Range T_J, T_stg -65 to +150 ^oC

• Base Current - Continuous I_B 0.5 Adc

• Total Power Dissipation @ T_C = 25oC P_D 125W