Optically Isolated gate driving circuit for IGBT and power MOSFET.
The TLP250H is a photocoupler in a DIP8 package that consists of a GaAlAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance and specifications at temperatures up to 125 degree. The TLP250H gate driver has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±40 kV/µs. It has a totem-pole output that can both sink and source current. The TLP250H is ideal for IGBT and power MOSFET gate drive.
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Optically Isolated gate driving circuit for IGBT and power MOSFET.
The TLP250H is a photocoupler in a DIP8 package that consists of a GaAlAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. It provides guaranteed performance and specifications at temperatures up to 125 degree. The TLP250H gate driver has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±40 kV/µs. It has a totem-pole output that can both sink and source current. The TLP250H is ideal for IGBT and power MOSFET gate drive.